Abstract
Thin films of ZnTe with thickness around 2.0 kA, 4.0 kA and 6.0 kA have been deposited by thermal evaporation method on ultrasonically cleaned glass substrates at 373 K substrate temperature under the pressure of 5×10−6 torr. The structural and optical characterizations of the films were carried out using X‐ray diffraction (XRD) technique and UV‐VIS‐IR spectroscopy respectively. The lattice constant (a), grain size(D), strain(e), dislocation density(ρ) were calculated and results have been discussed. The optical bandgap, (Eg) have been determined from the absorption spectra for all thin films which indicates direct band to band transitions. Variations of transmittance and extinction coefficient with incident photon energy have also been investigated.
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