Abstract
In this paper we clarify the relationship between the relaxation rate andrelaxation time distributions underlying the Kohlrausch–Williams–Watts(KWW) photoconductivity build-ups in indium- and gallium-dopedCd1−xMnxTe mixed crystals. We discuss the role of asymptotic properties of the corresponding probabilitydensity functions. We show that the relaxation rate distribution, as a completely asymmetricα-stable distribution, leads to an infinite mean value of the effective relaxationrate. In contrast, the relaxation time distribution related to it leads to a finitemean value of the effective relaxation time. It follows from the experimentaldata analysis that for all the investigated samples the KWW exponentα decreases linearly with increasing photon flux in the range of (0.6–0.99) and its values aremore spread in the case of gallium-doped material. We also observe a linear dependence ofthe mean relaxation time on the characteristic material time constant, which is consistentwith the theoretical model.
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