Abstract
Highly rectifying Ag, Au, Pd, and Pt Schottky contacts have been fabricated on heteroepitaxial pulsed-laser deposited ZnO-thin films by reactive sputtering. X-ray photoelectron spectroscopy revealed an oxidation of the Ag, Pd, and Pt contact material; the gold contacts are purely metallic. The necessity of a conductive capping of the oxidized contacts is proven by photocurrent measurements of AgxO contacts. The ideality factors and the effective barrier heights were determined by current-voltage measurements. Capacitance-voltage and temperature dependent current-voltage measurements were furthermore carried out to determine the mean barrier height, the standard deviation and the respective voltage dependencies taking lateral fluctuations of the barrier height into account.
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