Abstract
We report homoepitaxial growth of large sized lightly boron doped CVD diamond on HPHT diamond (100) substrates. Light boron doping was achieved by using a solid boron nitride disk as a substrate holder. Colourless boron doped diamonds with no macroscopic defects such as non-epitaxial crystallites over large areas of at least 4 × 4 mm2 and thicknesses as thin as 0.77 mm to thick layers of 1.5 mm were grown. The plates were subsequently separated from the substrates by laser cutting and polished. Hall Effect measurement at room temperature indicates that the free hole concentration, hole mobility and resistivity are ~1013 cm−3, 1550–2200 cm2 V−1 s−1 and 71–160 Ωcm, respectively. Infrared absorption spectroscopy was used to estimate the effective boron concentration in the plates. Raman/photoluminescence (λex = 514.5 nm) and UV–visible spectroscopy were used to characterize the high quality CVD diamond plates and we observe that nitrogen-related optical features are absent upon boron doping.
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