Abstract
Properties of GaN thin films deposited by rf-magnetron sputtering on monocrystalline sapphire, Si, and MgO substrates as well as on ZnO, MgAl2O4, and AlN buffer layers were investigated. The X-ray structural and crystallochemical analysis of phase composition, structure parameters, texture parameters and crystallite size of GaN films was carried out. Luminescent and electrical properties of GaN films on various substrates and buffer layers are described.
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