Abstract
Degenerate n-type GaAs epitaxial layers doped with Ge are grown from a Au-rich melt. The layers are typical of those produced via the alloy-regrowth process used to make contacts with AuGe or AuSb + 2% Ge. Traps are found in the forbidden gap with one trap induced by the AuGe complex identified at 160 meV above the valence band edge.
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