Abstract
A hot filament activated plasma-assisted chemical vapour deposition (PACVD) technique was developed to deposit BN films under a wide range of conditions. Using this technique, mixed-phase boron nitride (BN) films, containing crystallites of the cubic phase embedded in a hexagonal matrix, were deposited from a non-toxic source material, borane-ammonia (BH 3 − NH 3) at a substrate temperature of up to 350 °C. These films showed good thermal and chemical stability, with smooth surface topography. It was found that the increased ion bombardment at higher r.f. power contributed to increasing the volume fraction of the cubic phase in the film. The film properties, e.g. refractive index and stress, are directly correlated with the increasing cBN content of the film produced by higher activation energy. Hardness of the film measured by ultra-low load indention showed an improvement over the silicon substrate. The electronic properties of these films were measured, and exhibited high resistivity and breakdown field strength, and a low level interface state density.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
