Abstract
The characteristics of the polaritons in structural defect semiconductor superlattices (SLs) are investigated based on the dielectric response theory. In the sample consisting of a GaAs/AlAs SL with an AlAs defect layer, it is found that the detailed patterns of the minibands, minigaps, and the dispersions of the interfacial polaritons strongly depend on the structural parameters of samples. It is anticipated that the interface polariton modes can be engineered by the control of the structural configuration.
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