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Abstract
Abstract This work studies the antireflection properties of liquid phase deposited aluminium oxide (LPD-Al2O3) thin film on black silicon (b-Si) fabricated by aluminium-assisted chemical etching (AACE). The morphological and optical characteristics of the LPD-Al2O3 are subsequently illustrated. The weighted average reflection ( R avg %) of mono c-Si is reduced from 44.9% to 33.7% (within 300–1100 nm wavelength region) after the deposition of the LPD-Al2O3. Alternatively, the R avg of b-Si is reduced from 9.4% to 7.6% when deposited with LPD-Al2O3. Based on the absorption result, potential J sc ( max ) for the planar c-Si is shown to increase from 22.5 mA cm−2 to 26.3 mA cm−2 after the deposition of LPD-Al2O3. Besides, the calculated potential J sc ( max ) for the b-Si increased from 35.5 mA cm−2 to 36.2 mA cm−2 after the deposition of the LPD-Al2O3.
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