Abstract
AbstractDeposition of E-beam interactive films by rf sputtering and their behavior under high intensity irradiation was investigated. Both polycrystalline and amorphous films of SiO2, ZrO2, Al2O3, and Y2O3were deposited and their behavior under irradiation found to-be strongTy dependent on film structure. Using a modified STEM the formation of small holes (<10nm diam.) was achieved with exposure times in the millisecond range. Deposition parameters, film characteristics, drilling behavior, and a possible mechanism are discussed.
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