Abstract
The propagation of beams of acoustic phonons generated by photoexcitation in a single highly conductive n-type gallium nitride crystal with the c-axis perpendicular to the surface was studied. Diffusive propagation of phonon beams was observed. Estimations of contributions of two main kinds of phonon scatterers, i.e. Ga vacancies and free carriers, show that the latter are responsible for the forming of the diffusive pulses. This conclusion is supported by the results of comparison of propagation of phonon pulses in specimen with the bare surface and with the condensed 4He film on it.
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