Abstract
A facile thermal modification method based on thermal oxidation etching was successfully developed as an effective way of improving the photoelectric properties of graphite carbon nitride (g-C3N4), and the as-prepared modified g-C3N4 was employed as the saturable absorber (SA) for a passively Q-switched Nd:LLF laser at 1.06 μm to improve the laser performance. Under the incident pump power of 7.68 W, a pulsed laser output with 110 ns pulse width at 95.5 kHz pulse repetition rate was achieved, which was the narrowest among the g-C3N4 materials used as SAs around 1 μm.
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