Abstract
The development of 4H-SiC PiN diodes capable of blocking to greater than 10 kV while having current ratings of 20 A at 100 A/cm2 is continuing in earnest. VF instability of these diodes continues to be a roadblock, but progress is being made, and a 20 A/10 kV 4H-SiC PiN diode wafer with an overall device yield of 40% has been fabricated. The latest device characteristics are discussed, along with details of approaches in improving the reverse recovery characteristics of these diodes to satisfy the requirements needed for implementation into high voltage inverter modules capable of switching at up to 20 kHz.
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