Abstract
The progress on molecularbeam epitaxial growth of HgCdTe focusing on the requirements by the 3rd generation of infrared focal plane arrays are described. As large format HgCdTe IRFPAs demanded, the efforts on HgCdTe MBE on large area alternative substrates were presented, such as the improvement of crystalline quality, surface morphology, as well as Cd composition umiformity. The device fabrication on 512×512 MW and SW IRFPAs well demonstrated the performance of HgCdTe epi-layer. The studies of HgCdTe MBE on lattice-match substrates also were described, which were essential for the fabrication of LW and APD HgCdTe detectors. After growth condition optimized, the uniformity of epi-layer was greatly improved. On 10 mm HgCdTe/ZnCdTe( x =0.22), a typical value of FWHM of (422) X-ray diffraction was found to be less than 25 arcsec, as well as the best results of EPD reached 3×10 4 cm - 2 .
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