Abstract
The surface stability, growth process, and structural stability of InGaN and InN are reviewed from a theoretical viewpoint. In 2001, a new theoretical approach based on an ab initio calculation was developed. This theoretical approach enables the investigation of the influence of growth conditions such as partial pressure and temperature on the surface stability. The theoretical approach is applied to the research on the In incorporation efficiency in InGaN grown on nonpolar and semipolar surfaces. The calculation results suggest that the N–H layer formed on such surfaces has a crucial role in In incorporation. Moreover, the structural stability of InN grown by pressurized-reactor MOVPE is reviewed. It was found by the theoretical approach that facet formation causes the spontaneous formation of islands with the zinc-blende structure.
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