Abstract
Abstract A selected review is given of some of the advances made in the understanding of the optical and related properties of SiC during the years 1992–1996. Areas which are briefly covered are ultraviolet reflectivity and band structure, phonon replicas and the positions in k -space of the conduction band minima, cyclotron resonance and effective masses, pressure dependence of the electronic energy gap, electronic Raman scattering in heavily doped SiC, acceptors and donors, transition metals, thermoluminescence, porous SiC, and erbium-implanted 3C, 4H, 6H and 15R SiC.
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