Abstract
A SIMS scanning ion microprobe has been used to investigate the feasibility of focused oxygen beams for the production and analysis of microscale oxide distributions in Si. Test structures of Al on Si (width about 1 μm, spacing between 10 and 20 μm) were used to characterize the microanalytical performance of the ion microprobe. To accomplish discrimination between the implanted primary ions and 16O in the native oxide, the experiments were carried out with a mass filtered beam of 18O 2 +. The beam diameter achieved at an energy of 10 keV and a beam current of 1 nA ranged between 1 and 1.5 μm. Depth profiles were recorded in the checkerboard mode with a pixel size down to less than 1 μm. Under these conditions the Al signal from nominally clean Si regions amounted to about 3×10 −3 of the signal from the Averlayers. Oxides were generated by line scan implantation as well as with a static beam. The sample composition around an in-situ generated oxide spot was determined by spatially resolved depth profiling and is presented in quasi-three-dimensional form.
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