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Abstract
In the present work, specimens of 6H–SiC were implanted with 5MeV krypton ions and 2.3MeV neon ions, to increasing fluences of 5×1013, 2×1014, 1×1015ions/cm2 for Kr-ion and to 3.75×1015ions/cm2 for Ne-ion, respectively. The implanted specimens were then thermally annealed, in vacuum at the temperature 500, 700 and 1000°C, respectively. In addition to the measurements with nanoindentation, XRD in our previous work [1], an investigation of the microstructures by using transmission electron microscopy (TEM) was carried out. The microstructures were observed to be dominated by simple defects, planar defects and crystal amorphization under different implantation dose. Recrystallization of the buried amorphous layer was observed after thermal annealing. Mechanisms underlying the changes of microstructures and their correlation with results from HRXRD and nano-indentation measurements are discussed.
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