Abstract
In this work, we studied the effect of technological regimes and proton implantation on the processes of defect formation in single-crystal n-type silicon (n-Si) doped with platinum using the method of impedance spectroscopy. It has been established that radiation-induced changes in the electrical conductivity of silicon depend significantly on the technological regimes of doping with impurities in silicon. Hodographs show that doping with platinum leads to a decrease in the electrical resistance of silicon samples. Irradiation with 2 MeV protons at a dose of 5.1 × 1014 particles / cm2 leads to a significant (2-3 times) increase in the electrical resistance of the silicon samples under study. It is concluded that the relatively high resistance to radiation exposure (resistance change of no more than 16%: from 55 kΩ to 65 kΩ as a result of ion implantation) of samples doped at 1200°C is presumably due to a higher concentration of impurity ions (platinum) in the samples volume compared to 1100°C.
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