Abstract
This paper will review some recent results in the study of the DX center in GaAs and AlGaAs using capacitance transient techniques under hydrostatic and uniaxial stress. These measurements have established the DX center as the deep state of substitutional donors in GaAs or AlGaAs which is lowered into the band gap by alloying or pressure.When compared with the predictions of various models of the DX center, the stress results are shown to be consistent with the DX centers having a two electrons negatively charged ground state (negative U).Models of the DX center as effective mass state of donor associated with the L conduction band valleys are found to be incon-sistent with stress experiments.
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