Abstract
The electronic properties, chemistry, and spatial structure of Au/CaF2/n-Si(111) metal–insulator–semiconductor (MIS) structures, with epitaxially grown CaF2 layers of a few monolayers (ML) thickness, have been studied by photoelectron spectroscopy, scanning-tunneling microscopy, and ballistic-electron emission microscopy. CaF2 films on Si are characterized by flat surfaces with defect lines about 500 Å apart, and band bending in Si reduces gradually with increasing CaF2 layer thickness. Au grows on top of the CaF2 layer in the form of hexagonal terraces. A Si segregation to the surface, as observed in case of the bare Au/Si interface, is strongly reduced by the CaF2 intralayer. Ballistic-electron emission microscopy shows a strong influence of the CaF2 density of states for electron transport through the intralayer. For a 4 ML thick CaF2 intralayer, the position of the CaF2conduction-band minimum is derived from the onset of the collector current at 3.3 V. The valence-band offset at the CaF2/Si interface is derived from the valance-band edge observed in photoelectron spectroscopy.
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