Abstract
We investigated charged defects on an n-GaAs(110) surface using light-modulated scanning tunneling spectroscopy. Tunneling via a single defect-induced gap state under photoillumination was observed for the isolated atomic defects. Screened Coulomb potentials induced around a charged Ga vacancy and a step edge were visualized, for the first time, with a nanometer spatial resolution. Furthermore, the charge states of the individual defects were determined on the atomic level.
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