Abstract
A new Negative Bias Temperature Instability (NBTI) model based on the probability of charge/discharge of defects in devices is presented. The model correctly describes the main experimental NBTI features, such as the threshold voltage shift (ΔV T ) evolution under DC or AC stresses, its frequency and duty cycle dependence and the statistical ΔV T distribution in small transistors. Finally, the model is used to explain the dependence of NBTI degradation on the stress/relaxation times, frequency and duty cycle in terms of defect occupancy.
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