Abstract
The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and $\mathrm{Ag}/n\ensuremath{-}\mathrm{GaAs}$ barrier heights of $97\ifmmode\pm\else\textpm\fi{}4\mathrm{m}\mathrm{e}\mathrm{V}/\mathrm{G}\mathrm{P}\mathrm{a}$ fall within the uncertainty of the pressure dependence of the ${\mathrm{As}}_{\mathrm{Ga}}$ defect and track the predicted value of ${\mathrm{As}}_{\mathrm{Ga}}$-rich interfaces. In contrast, the pressure dependence of the $\mathrm{Fe}/n\ensuremath{-}\mathrm{GaAs}(100)$ Schottky barrier height of $109\ifmmode\pm\else\textpm\fi{}7\mathrm{m}\mathrm{e}\mathrm{V}/\mathrm{G}\mathrm{P}\mathrm{a}$ does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.
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