Abstract
The analysis of investigations carried out on studying influence of all-around pressure to Schottky diodes based on n-Si<Bi> construction characteristics has been presented. It has been revealed that before the pressure influence the diodes capacitance is growing monotonically on the increasing temperature, at the same time after depressurization it loses monotony and has the maximal value about 50 pF on 30 oC temperature. It has been shown that the diodes conductivity is growing slowly on temperature both under the pressure and after its removal. When the pressure up to 12 kBar is acting to n-Si<Ni> diodes structures then we deal with monotonic growing the resistivity. Further, when pressure is growing in range of 12 and 60 kBar then changes in n-Si<Ni> samples resistivity on influence pressure has not monotonic character with a maximum value by P ≥ 35 kBar.
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