Abstract
The distinctive crystal structure and anisotropic electrical characteristics of rhenium disulfide (ReS2) have garnered growing interest. Pressure and strain engineering has been used to modulate structural and electronic transition. Here, we present a comprehensive study on the high-pressure phase transition and strain tunable electronic properties of ReS2. There occurs a structural transition from distorted-1T to distorted-1T′ at 7.5 GPa. In addition, ReS2 has opposite piezoresistive effects along the two principle axes in the plane. This study shows that pressure and strain may be used to tune the characteristics of ReS2 for future optoelectronic applications.
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