Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights

Abstract

One dimensional (1D) heterojunction arrays with high-density well-aligned ZnO nanowires (ZnO NWs) on p-type semiconductor has been demonstrated to be potential building blocks for photovoltaic (PV) and photodetecting devices applications due to its direct/wide bandgap and th e oriented geometry which provides a high carrier collection efficiency [1–6]. In this paper, we present the synthesis of vertically aligned ZnO NWs on a p-type gallium nitride (GaN) layer by using a n easy hydrothermal method to form ZnO NW/p-GaN nano heterojunction (NHJ) arrays f or optoelectronic devices applications. The optoelectronic properties of the ZnO NWs/p-GaN N HJs wi th good UV sensitivities and superior PV performances under an UV (366 nm) light and a simulated AM1.5G so lar illumination were reported. Effects of t he length of ZnO NW s on the PV performance of the ZnO NWs/p-GaN NH Js were also investigated and discussed.