Abstract
We report on the growth and properties of SrRuO 3 films for application as metal gates for CMOS devices. The films were grown at 500 °C by metal-organic chemical vapour deposition on Si substrates with thermal SiO 2, atomic-layer deposited Al 2O 3 and HfO 2 dielectric films. The films exhibit room temperature resistivity below 1 mΩ cm. We have analysed the interface between the SrRuO 3 metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N 2+10% H 2) were employed for testing the stability of the SrRuO 3 metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance–voltage measurements. The properties of metal-organic chemical vapour grown SrRuO 3 gate electrode are analysed with regards to integration in CMOS devices.
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