Abstract
The new technology of the formation of photoresistive structures sensitive in ultraviolet range of electromagnetic spectrum based on lead selenide and lead selenite composite is discussed. Studies of photosensitivity were carried out using a set of LEDs in the visible and ultraviolet spectral range. Obtained structures show considerable sensitivity in ultraviolet and blue range of radiation, meanwhile that in red and yellow region of light turned to be small. The structures were formed by oxidation of PbSe crystals. Diffusion of the oxygen through the surface layer of PbSe was suggested to be a key mechanism of oxidation. Oxidation kinetics were studied by means of roentgen lines chemical shift and roentgen diffraction.
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