Abstract
Hydrogenated amorphous Si 1− x C x films were prepared by glow discharge decomposition from a mixture of SiH 4 and C 2H 4 at substrate temperatures between room temperature and 260°C under a low r.f. power condition. The deposition rate, hydrogen content, optical band gap and photoluminescence were investigated. These films contain hydrogen atoms at concentrations of 40–70 at.%. The optical band gap and photoluminescence peak energy increase monotonically with x and also with decreasing substrate temperature. Bright bluish white photoluminescence was observed at room temperature in samples of composition Si 0.14C 0.86. The film structure and the emission mechanism are discussed.
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