Abstract
Preparation of GaSe Nanorods Sensor by Liquid Phase Exfoliation
Highlights
The III-VI compound semiconductor GaSe belongs to a two-dimensional layered structure, and the p-type semiconductor has a band gap that varies from 2.1eV to 3.5eV as the number of layers decreases [1,2]
GaSe nanorods were synthesized by liquid phase exfoliation as a resistive switch memory device with a transverse graphene/GaSe/graphene structure
The traditional liquid phase exfoliation will reduce the purity of the material device because the organic solvent has a higher boiling point [5,6].controlling the growth of high-quality two-dimensional selenide crystals has become a hot topic of research [7]
Summary
The III-VI compound semiconductor GaSe belongs to a two-dimensional layered structure, and the p-type semiconductor has a band gap that varies from 2.1eV to 3.5eV as the number of layers decreases [1,2]. *Corresponding author: Wanqiang Cao, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China Submission: October 02, 2019
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
