Abstract
In this paper, CuSbS2 thin films were prepared by a facile and environmental-friendly chemical solution method at low temperature. The effect of sulfurization temperature was studied. The properties of CuSbS2 thin films were investigated by X-ray diffraction, scanning electron microscopy, UV–Vis and photocurrent response measurement. The results indicated CuSbS2 thin films sulfurized at 350 °C showed better crystallinity and no impurity phase. The as-prepared CuSbS2 film had a band gap of 1.5 eV and an obvious photoconductivity.
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