Abstract
Cu-In-Se films have been deposited by a hot-wall evaporation technique using CuCl and In2Se3 as source materials. The composition of films was severely dependent on the substrate temperature. In the present study, near-stoichiometric CuInSe2 films were deposited on the substrate heated to about 440°C when CuCl and In2Se3 were respectively sublimed from two sources heated to 260 and 560°C. X-ray diffraction measurement detected no additional second phase and the film exhibited low resistivity and p-type conduction.
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