Abstract
ABSTRACTEpitaxial PbTe and CdxPb1−xTe films have been grown on single crystal (111) BaF2 by low energy bias sputtering, and have been analyzed by transmission electron microscopy (TEM) and transmission electron diffraction (TED). Preparation of suitable cross-sectional TEM samples was made difficult by the tendency of the substrate to cleave apart during dimpling, and by the epoxy forming bridges across the sample during atom milling. Suitable preparation techniques were developed employing back-polishing the BaF2 substrates to <0.2 mm thickness, using a suitable epoxy, and shielding the argon atom beam during milling to prevent milling parallel to the surface. In cases where an epoxy bridge did form across the sample, the bridge was broken manually or by atom milling, depending upon the area of sample which was being investigated. These techniques are applicable to other materials which produce similar problems during TEM sample preparation.
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