Abstract
Hetero-epitaxial growth of CdSe on artificial mica (fluorflogopit, KMg3[Si3AlO10]F2), on (0001) sapphire and (111) Ge substrates has been investigated using the H2–CdSe vapour growth technique. The partial pressures of cadmium and selenium in the gas phase has been calculated for the different temperatures. The transport rate of the CdSe source and the growth rate of the epitaxial layers are theoretically and experimentally defined. A comparison between the experimental results and the thermodynamic model has been made. The structure and morphology of the layer surfaces are investigated. [Russian Text Ignored].
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