Abstract
The objective of this research was to study the effect of various parameters such as temperature and pH to the formation of cadmium indium selenide ( CdIn2 Se 4 ) thin films, which were fabricated by sol–gel dip-coating method. This n-type semiconductor compound is suitable for application as thermoelectric materials. Cadmium, indium, selenium precursors were separately dissolved by solvents: ethanol, hydrochloric acid, and acetic acid to form metal alkoxides. The precursor solutions were then mixed together in N 2 atmosphere. These metal alkoxides were hydrolyzed by adding water and then polycondensed by adding ethylene glycol to become gels. These gels were adjusted to various acid-base values by adding diethylnolamine. Glass substrates were dipped into the gels to form thin films. These thin films were annealed at various temperatures in N 2 atmosphere and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and fourier transfrom infrared spectroscopy (FTIR) techniques. The results indicated that CdIn2 Se 4 compound occurred by the reaction at room temperature with pH 4 and annealed at 450°C in N 2 atmosphere.
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