Abstract
Cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) for the formation of antimony (Sb) thin films was investigated using Sb(i-C3H7)3 and H2 plasma at temperatures of 200-275 degrees C. The effects of deposition temperature on the film properties, such as resistivity, surface roughness, and crystallinity were examined. The film growth rate (thickness/cycle) was found to be in the range of 0.10-0.5 nm/cycle. High substrate temperatures tended to promote low resistivity, high purity, and smooth surface morphology of the films, compared to low substrate temperatures. All of the deposited films were polycrystalline, with higher deposition temperatures yielding a higher crystallinity in the Sb films.
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