Abstract
Si/SiCxOy multilayers have been prepared by magnetron sputtering technique. Effects of annealing temperature (T a ) on the microstructural and electrical properties of Si/SiCxOy multilayer films were systematically investigated using high resolution transmission electron microscope, grazing incident X-ray diffraction, Raman spectroscopy, UV–Vis–NIR spectroscopy, and Hall measurements. The T a has great effects on the optical properties of Si/SiCxOy multilayer thin films. It is found that the onset of nanocrystalline Si phase (Si quantum dots) formation occurs at 800 °C. SiC crystalline phases are not formed in Si/SiCxOy multilayer film even at the T a 1000 °C. It is indicated that the method of depositing a Si/SiCxOy multilayer followed by thermal induced crystallization gives flexibility to suppress the crystallization of an a-SiC phase. With increasing T a the grain size, dot density, and optical bandgap increase, the conductivity also increase. These results demonstrate that high quality Si QDs embedded in Si/SiCxOy multilayer films deposited by magnetron sputtering can be obtained by properly controlling the annealing condition.
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