Abstract
(Pb, Ca)TiO3 (PCT) thin films were fabricated by multiple-cathode RF-magnetron sputtering, using PbO, CaTiO3 and Ti metal targets. PCT films deposited on Pt/Ti/SiO2/Si and Pt/MgO at the substrate temperature from 460° C to 540° C had perovskite structures. The relationship between the substrate temperature and the film properties were investigated. The remanent polarization, dielectric constant and leakage current of the 200-nm-thick PCT(Ca/Ti=0.30) thin films deposited on Pt/Ti/SiO2/Si at 460° C and on Pt/MgO at 500° C were 22.5 µ C/cm2 225 and on the order of 10-7 A/cm2 (at a field of 250 kV/cm), 41 µ C/cm2, 174 and on the order of 10-7 A/cm2 (at a field of 250 kV/cm), respectively.
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