Abstract
Ge particles were successfully incorporated into MgF 2 films by the multi source PVD technique. The dependence of the optical band gap energy E g on Ge concentration in the MgF 2 matrix was investigated before and after annealing. In as-deposited films a strong increase of E g at low Ge concentrations points to the existence of a quantum-size effect. Annealing at 500°C yields enlarged Ge crystallites on a 10 nm scale connected with a decrease of E g and a split of the energy dependence of the absorption constant indicating the coexistence of non-direct and direct electronic transitions.
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