Abstract
Antimony selenide (Sb2Se3) films self-assembled by Sb2Se3 nanowires, with orthorhombic structure and preferentially growing along (001) plane, were prepared by combining spin-coating and gas-induced reduction method on glass substrates, using antimony ethylene glycolate and SeO2 as the raw materials, hydrazine hydrate as a gas reductant. The morphology and microstructure of the Sb2Se3 films can be modulated by simply adjusting reaction time. The films obtained by heating the spin-coated precursor films at 240 °C for 20 and 60 min consisted of Sb2Se3 nanowires with diameters of ~15–30 nm and 40–80 nm, had electrical resistivities of 3.53 and 1.66 Ω m (which are several orders of magnitude lower than that of the Sb2Se3 film prepared by a spray deposition method) and extremely high Seebeck coefficients, −2,980 and −1,260 μV/K, respectively. The electrical resistivity of the 20-min reacted nanostructured film showed a weak temperature dependence. The as-prepared nanostructured Sb2Se3 films have potential for thermoelectric application and the method could be extended to other chalcogenide films.
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