Abstract
Well-aligned tin-doped indium (ITO) nanowires have been prepared using the electrospinningprocess. The Sn doping mechanism and microstructure have been characterized byx-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Devices forI–V measurement and field-effect transistors (FETs) were assembled using ITOnanowires with top contact configurations. The effect of Sn doping on theelectrical conductivity was significant in that it enhanced the conductance by over107 times,up to ∼1 S cm−1 for ITO nanowires with an Sn content of 17.5 at.%. The nanowire FETswere operated in the depletion mode with an electron mobility of up to0.45 cm2 V−1 s−1 and anon/off ratio of 103.
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