Abstract
Well-aligned tin-doped indium (ITO) nanowires have been prepared using the electrospinningprocess. The Sn doping mechanism and microstructure have been characterized byx-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Devices forI–V measurement and field-effect transistors (FETs) were assembled using ITOnanowires with top contact configurations. The effect of Sn doping on theelectrical conductivity was significant in that it enhanced the conductance by over107 times,up to ∼1 S cm−1 for ITO nanowires with an Sn content of 17.5 at.%. The nanowire FETswere operated in the depletion mode with an electron mobility of up to0.45 cm2 V−1 s−1 and anon/off ratio of 103.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.