Abstract
In this work, Carbon:Selenium (C:Se) nanoparticles (NPs) are preparation by laser ablation at diverse laser energy 200, 400, 600,800 and 1000 mJ with 100 shots and laser wavelength 1064 nm then deposited on porous silicon (PS). PS are fabricated using electrochemical etching (ECE) method for p-type crystalline silicon (c-Si) wafers of (100) orientation.The pattern of X-ray diffraction (XRD) showed the sample's nanocrystaline.Results of the Atomic force microscope (AFM) analysis an average diameter of 39.76 nm coordinated in a rod-like shape appears for C:Se NPs. UV–vis result displayed that the optical energy gap of the nanoparticles increases. The electrical properties such as barrier height (ΦB) and ideality factor (n) of the Al/C:SeNPs/PS/Si/Al heterojunction were determined from the current density-voltage (J-V) measurements.
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