Abstract
The high purity ZnO ceramic target and the (MgO)0.1(ZnO)0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1−xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the MgxZn1−xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31eV for the ZnO film to 3.64eV for the MgxZn1−xO alloy film. The Mg content x in the MgxZn1−xO alloy film was determined to be 0.18.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
