Abstract
A comparative study of Ti and TiN IBAD films as diffusion barriers for Cu has been done. It is found that amorphous Ti (a-Ti) and TiN (a-TiN) films show better thermal stability than (010) oriented Ti (c-Ti) and (111) oriented TiN (c-TiN) films. Such thermal stability can be attributed to their microstructure lacking grains that are fast diffusion paths compared to the imperfect preferentially oriented films prepared by IBAD. The absence of excess impurities in the c-TiN film also impedes the ‘stuffing effect’ and deteriorates its thermal stability. The 600 Å c-Ti/a-TiN multilayer shows inferior thermal stability compared to 300 Å a-TiN while the improvement resulting from the 600 Å a-Ti/a-TiN multilayer is observed. The detrimental effect of the c-Ti layer inserted between the surface Cu and a-TiN can be attributed to the presence of its grain boundaries, making the interdiffusion between Cu and a-TiN much easier than at the interface of Cu/a-TiN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
