Abstract

Abstract Advanced memory technologies are in demand with phase change memory (PCM) devices as a forefront candidate. For successful characterization by transmission electron microscopy (TEM) for failure analysis and device development, an accurate and controllable thinning of TEM specimens is critical. In this work, TEM specimens from a GeTe-based PCM device at a partial SET state were prepared using a Xe plasma focused ion beam (pFIB) and polished to electron transparency using Ar ion beam milling. We will highlight the differences between Ga focused ion beam (FIB) and Xe pFIB TEM specimen preparation, the benefits of post-pFIB Ar ion beam milling, and show TEM results of the effects of partial SET programming of the GeTe PCM device.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.