Abstract
With the aggressive scale down of MOSFET junction depth, nickel silicide (incorporated with platinum) is finally coming into picture with its low resistivity and silicon consumption. The sheet resistance and junction leakage are always a tradeoff during nickel silicide process development. This article introduces a novel nickel silicide process scheme to achieve low sheet resistance and low junction leakage at the same time. PAI(Pre-Amorphous Implant) is applying for sheet resistance reduction; the well controlled low process temperature during PAI and MSA (Milli-second Annealing) maintain the low junction leakage level.
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