Abstract
The formation of dislocations in silicon implanted with keV and MeV 69Ga, 75As, 115In, 121Sb, and 131Xe ions at doses below the threshold for amorphization was studied. Implants at keV energies of these species do not lead to secondary defects after annealing. In contrast, after MeV ion implantation and annealing at 900°C for 15 min, bands of dislocations are formed if a critical amount of damage is generated during implantation. This secondary defect formation is observed because enough mobile Si interstitials are available to agglomerate into stable dislocation loops.
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