Abstract

Amorphous hafnium silicate, a-Hf 0.1Si 0.9O x , thin film with thickness of 32, 41, 55, 80, 110, 120, 180 and 320 nm was prepared by multiple spin-cast process and the proton conductivity across the films was measured at intermediate temperatures (100–400 °C) in dry atmosphere. The morphologically- and compositionally-uniform films were prepared on a substrate as confirmed by SEM, RBS and XPS measurements. a-Hf 0.1Si 0.9O x thin film clearly revealed the H/D isotope effect on ionic conductivity, indicating that protonic conduction is dominant in the measured temperature range. The films did not reveal thickness-dependent proton conductivity in dry air and the σ at given temperatures is almost constant at any thickness. No increment of σ in a-Hf 0.1Si 0.9O x thin films by reduction of thickness might be related to the absence of the highly-conductive acid network with mesoscopically-sized length because of the relatively low concentration of Brønsted acid sites inside films.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.