Abstract
The design of power and high voltage devices using two-dimensional numerical simulation is presented. The basic equations of semiconductors are explained along with special features belonging to power devices. The software tools used are described; they are based on the solution of either Poisson's equation alone to study the high voltage, off-state behaviour of the device, or the three coupled equations (Poisson and currents) to evaluate the on-state behaviour (high or low biased). The breakdown voltage is calculated by the solution of the ionization integrals for both electrons and holes, and its location is given. On-resistance and external currents are calculated for the off-state. Some examples are given, including the current flowing in a multicell vertical DMOS (VDMOS), the voltage handling capability of the lateral double diffused MOS transistor (LDMOS) with and without a reduced surface field (RESURF) technique, the influence of a semi-resistive layer on the on-state behaviour of the LDMOS, and the voltage handling capability of a planar bipolar transistor with a semi-resistive layer.
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